Part Number Hot Search : 
24C25 WPUGPA LN1351C ICS726A 2A280Z W83310UG CS840 RP1104
Product Description
Full Text Search
 

To Download TDA1565TH Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  d a t a sh eet product speci?cation supersedes data of 2003 aug 13 2004 jan 27 integrated circuits TDA1565TH high efficiency 2 40 w / 2 w stereo car radio power amplifier
2004 jan 27 2 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH features low dissipation due to switching from single-ended (se) to bridge-tied load (btl) mode differential inputs with high common mode rejection ratio (cmrr) mute, standby or operating mode selectable by pin load dump protection circuit short-circuit safe to ground; to supply voltage and across load loudspeaker protection circuit thermal protection at high junction temperature device switches to single-ended operation at high junction temperature clip detection at 2.5 % thd diagnostic signal indicating clipping, short-circuit protection and pre-warning of thermal protection. general description the TDA1565TH is a monolithic power amplifier in a 20-lead heatsink small outline plastic package. it contains two identical 40 w amplifiers. power dissipation is minimized by switching from se to btl mode only when a higher output voltage swing is needed. the device is developed primarily for car radio applications. quick reference data ordering information symbol parameter conditions min. typ. max. unit v p supply voltage dc-biased 6.0 14.4 18 v non-operating -- 30 v load dump -- 45 v i orm repetitive peak output current -- 8a i q(tot) total quiescent current r l = - 95 150 ma i stb standby current - 150 m a ? z i ? differential input impedance 90 120 150 k w p o output power r l =2 w ; thd 0.5 % 25 31 - w r l =2 w ; thd 10 % 37 40 - w r l =2 w ; eiaj - 60 - w g v voltage gain 25 26 27 db cmrr common mode rejection ratio f = 1 khz; r s =0 w- 80 - db svrr supply voltage ripple rejection f = 1 khz; r s =0 w 50 65 - db ?d v o ? dc output offset voltage -- 100 mv a cs channel separation r s =0 w ; p o = 25 w 50 70 - db ?d g v ? channel unbalance -- 1db type number package name description version TDA1565TH hsop20 plastic, heatsink small outline package; 20 leads; low stand-off height sot418-3
2004 jan 27 3 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH block diagram handbook, full pagewidth mhc600 + - + - + - + - mute channel 2 channel 1 v/i v/i v/i i/v i/v v/i slave control 14 13 in2 + 19 cin in2 - 60 k w 60 k w 60 k w 60 k w 25 k w v ref out2 - out2 + 7 8 cse 16 + - + - + - + - mute slave control 17 18 in1 + 1 n.c. in1 - out1 + out1 - 4 3 + - v p standby logic clip detection and thermal protection pre-warning 215 mode diag gnd1 5 gnd2 6 v p2 11 v p1 20 TDA1565TH 9 n.c. 10 n.c. 12 n.c. fig.1 block diagram.
2004 jan 27 4 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH pinning symbol pin description n.c. 1 not connected mode 2 mute/standby/operating mode selection out1 - 3 inverting channel 1 output out1+ 4 non-inverting channel 1 output gnd1 5 ground 1 gnd2 6 ground 2 out2 - 7 inverting channel 2 output out2+ 8 non-inverting channel 2 output n.c. 9 not connected n.c. 10 not connected v p2 11 supply voltage 2 n.c. 12 not connected in2 - 13 inverting channel 2 input in2+ 14 non-inverting channel 2 input diag 15 diagnostic output cse 16 electrolytic capacitor for se mode in1+ 17 non-inverting channel 1 input in1 - 18 inverting channel 1 input cin 19 common input v p1 20 supply voltage 1 TDA1565TH v p1 n.c. cin mode in1 - out1 - in1 + out1 + cse gnd1 diag gnd2 in2 + out2 - in2 - out2 + n.c. n.c. v p2 n.c. 001aaa306 20 19 18 17 16 15 14 13 12 11 9 10 7 8 5 6 3 4 1 2 fig.2 pin configuration.
2004 jan 27 5 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH functional description the TDA1565TH contains two identical amplifiers with differential inputs. at low output power (output amplitudes of up to 3 v (rms) at v p = 14.4 v), the device operates as a normal se amplifier. when a larger output voltage swing is required, the circuit automatically switches internally to btl operation. with a sine wave input signal, the power dissipation of a conventional btl amplifier with an output power of up to 3 w is more than twice the power dissipation of the TDA1565TH (see fig.10). during normal use, when the amplifier is driven by typical variable signals such as music, the high (btl) output power is only needed for a small percentage of time. assuming that a music signal has a normal (gaussian) amplitude distribution, the power dissipation of a conventional btl amplifier with the same output power is approximately 70 % higher (see fig.11). the heatsink must be designed for music signal operation. when such a heatsink is used, the ics thermal protection will disable the btl mode when the junction temperature exceeds 150 c. in this case the output power is limited to 10 w per amplifier. the gain of each amplifier is internally fixed at 26 db. the device can be switched to any of the following modes by applying the appropriate voltage to the mode pin (see fig.3): standby with low standby current (less than 50 m a) mute condition; dc adjusted on, operation. the device is fully protected against a short-circuit of the output pins to ground or to the supply voltage. it is also protected against a loudspeaker short-circuit and against high junction temperatures. in the event of a permanent short-circuit condition, the output stage is repeatedly switched on and off with a low duty-cycle resulting in low power dissipation. when the supply voltage drops below 6 v (e.g. vehicle engine start), the circuit is immediately muted to prevent audible clicks that may be produced in the electronic circuitry preceding the power amplifier. the voltage across the se electrolytic capacitor connected to pin 16 is kept at 0.5 v p by a voltage buffer (see fig.1). the capacitor value has an important influence on the output power in se mode, especially at low frequency signals; a high value is recommended to minimize power dissipation at low frequencies. the diagnostic output indicates the following conditions: clip detection at 2.5 % thd (see fig.4) short-circuit protection (see fig.5): C when an output short-circuit occurs (for at least 10 m s); the output stages are switched off for approx. 500 ms, after which time the outputs are checked to see if a short-circuit condition still exists. during any short-circuit condition, the power dissipation is very low. during a short-circuit condition pin diag is at logic low. start-up/shutdown; when the product is internally muted thermal protection pre-warning: C if the junction temperature rises above 145 c but is below the thermal protection temperature of 150 c, the diagnostic output indicates that the thermal protection condition is about to become active. this pre-warning can be used by another device to reduce the amplitude of the input signal which would reduce the power dissipation. the thermal protection pre-warning is indicated by a logic low at pin diag. handbook, halfpage mgr176 18 v mode (v) 4 3 2 1 0 mute operating standby fig.3 switching levels of the mode select pin (pin mode).
2004 jan 27 6 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH heatsink design there are two parameters that determine the size of the heatsink. the first is the rating of the virtual junction temperature and the second is the ambient temperature at which the amplifier must still deliver its full power in the btl mode. example: with a conventional btl amplifier, the maximum power dissipation for a typical signal, such as music (at each amplifier) will be approximately two times 15 w. at a virtual junction temperature of 150 c and a maximum ambient temperature of 65 c, r th(vj-c) = 1.8 k/w and r th(c-h) = 0.2 k/w. for a conventional btl amplifier the thermal resistance of the heatsink should be: compared to a conventional btl amplifier, the TDA1565TH has a higher efficiency. the thermal resistance of the heatsink should be: (see fig.6). handbook, halfpage mhc601 v out1; v out2 v diag 0 0 t fig.4 clip detection waveforms. handbook, halfpage mhc595 output pins short-circuit (to ground) short-circuit removed loudspeaker short-circuit 500 ms 500 ms 500 ms 500 ms 500 ms v diag 0 imax imax t t 10 m s 10 m s 10 m s 10 m s 10 m s i out1; i out2 fig.5 short-circuit protection waveforms. 150 65 C 215 ---------------------- 1.8 C 0.2 C 0.83 k/w = 150 65 C 210 ---------------------- 1.8 C 0.2 C 2.25 k/w = handbook, halfpage mhc586 case virtual junction channel 2 channel 1 3.0 k/w 3.0 k/w 0.3 k/w fig.6 equivalent thermal resistance network.
2004 jan 27 7 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH limiting values in accordance with the absolute maximum rating system (iec 60134). thermal characteristics symbol parameter conditions min. max. unit v p supply voltage operating - 18 v non operating - 30 v load dump; t r > 2.5 ms - 45 v v p(sc) short-circuit safe voltage - 16 v v rp reverse polarity voltage - 6v i orm repetitive peak output current - 8a p tot total power dissipation - 60 w t stg storage temperature - 55 +150 c t vj virtual junction temperature - 150 c t amb operating ambient temperature - 40 +85 c symbol parameter conditions value unit r th(j-c) thermal resistance from junction to case see fig.6 1.8 k/w r th(j-a) thermal resistance from junction to ambient in free air 40 k/w
2004 jan 27 8 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH dc characteristics v p = 14.4 v; t amb =25 c; measured in fig.7; unless otherwise speci?ed. notes 1. the circuit is dc-biased at v p = 6 to 18 v and ac-operating at v p = 8 to 18 v. 2. if the junction temperature exceeds 150 c, the output power is limited to 10 w per channel. symbol parameter conditions min. typ. max. unit supplies v p supply voltage note 1 6.0 14.4 18.0 v i q(tot) quiescent current r l = - 95 150 ma i stb standby current - 150 m a v cse average voltage of se electrolytic capacitor at pin 16 - 7.1 - v ?d v o ? dc output offset voltage on state -- 100 mv mute state -- 100 mv mode select switch (see fig.3) v mode voltage at mode select pin standby condition 0 - 1v mute condition 2 - 3v on condition 4 5 v p v i mode mode select input current v mode =5v - 25 40 m a diagnostic v diag voltage at diagnostic output pin protection/temp pre-warning/clip detection -- 0.5 v i diag diagnostic sink current v diag < 0.5 v 2 -- ma protection t pre pre-warning temperature - 145 - c t dis(btl) btl disable temperature note 2 - 150 - c
2004 jan 27 9 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH ac characteristics v p = 14.4 v; r l =2 w ; f = 1 khz; t amb =25 c; measured in fig.7; unless otherwise speci?ed. notes 1. the distortion is measured with a bandwidth of 10 hz to 30 khz (see figures 20 and 21). 2. frequency response externally fixed (input capacitors determine the low frequency roll-off). 3. the se to btl switch voltage level depends on the value of v p . 4. noise output voltage measured with a bandwidth of 20 hz to 20 khz. 5. noise output voltage is independent of the source resistance (r s ). symbol parameter conditions min. typ. max. unit p o output power r l =2 w ; thd = 0.5 % 25 31 - w r l =2 w ; thd = 10 % 37 40 - w r l =2 w ; eiaj - 60 - w v p = 13.2 v; thd = 0.5 % - 26 - w v p = 13.2 v; thd = 10 % - 34 - w thd total harmonic distortion p o = 1 w; note 1 - 0.1 - % p power dissipation see figs 10 and 11 w b p power bandwidth thd = 0.5 %; p o = - 1db with respect to 25 w - 20 to 15000 - hz f ro(l) low frequency roll-off - 1 db; note 2 - 25 - hz f ro(h) high frequency roll-off - 1 db 130 -- khz g v closed-loop voltage gain p o = 1 w; (see fig.16) 25 26 27 db svrr supply voltage ripple rejection r s =0 w ; v ripple =2v (p-p) ; (see fig.17) on/mute 50 65 - db standby 90 - db cmrr common mode rejection ratio f = 1 khz; r s =0 w- 80 - db ? z i ? differential input impedance 90 120 150 k w ?d z i ? mismatch in input impedance - 1 - % v se-btl se to btl switch voltage level note 3 - 3 - v ? v out ? output voltage mute (rms value) v i = 1 v (rms) - 95 150 m v v n(o) noise output voltage on; r s =0 w ; note 4 - 95 150 m v on; r s =10k w ; note 4 - 100 -m v mute; note 5 - 90 150 m v a cs channel separation r s =0 w ; p o =25w 50 70 - db ?d g v ? channel unbalance -- 1db
2004 jan 27 10 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH test and application information handbook, full pagewidth mhc603 19 cin 25 k w 60 k w 60 k w 60 k w 60 k w v ref out2 - out2 + 7 8 cse 16 18 in1 - 17 in1 + out1 + out1 - 4 3 standby logic clip and diagnostic 215 mode diag 5 gnd1 6 gnd2 v p2 11 v p1 20 TDA1565TH 10 m f 2200 m f 220 nf 0.5r s 220 nf 0.5r s + - + - v mode v p v logic r pu 13 in2 - 14 in2 + 220 nf 0.5r s 100 nf 100 nf 3.9 w 2 w 3.9 w 100 nf 100 nf 3.9 w 2 w 3.9 w 10 k w 220 nf 0.5r s + - + - 220 nf 2200 m f signal ground power ground fig.7 application diagram. connect boucherot (iec-60268) filter to pin 4 and pin 7 using the shortest possible connection. r s = source resistance.
2004 jan 27 11 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH handbook, full pagewidth mhc587 tda1564th/65th gnd agnd diag 22 m f 220 nf 1000 m f 2200 m f 22 m f 10 m f in2 in1 v p on off out1 out2 fig.8 pcb layout (component side) for the application shown in fig.7. a. top silk screen (top view). b. top copper track (top view).
2004 jan 27 12 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH handbook, full pagewidth mhc588 100 nf 220 nf 220 nf 220 nf 3e9 3e9 3e9 100 nf 100 nf 3e9 100 nf 150 k w 51 k w 2.7 k w fig.9 pcb layout (soldering side) for the application shown in fig.7. a. bottom silk screen (top view; legend reversed). b. bottom copper track (top view).
2004 jan 27 13 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH handbook, halfpage 010 30 50 0 20 10 20 30 40 mhc589 (1) (2) p o (w) p (w) fig.10 power dissipation as a function of output power; sine wave driven. input signal 1 khz, sinusoidal; v p = 14.4 v; r l =2 w . (1) for a conventional btl amplifier. (2) for TDA1565TH. handbook, halfpage 010 40 0 10 20 30 2468 mhc590 (1) (2) p o (w) p (w) fig.11 power dissipation as a function of output power; pink noise through iec-60268 filter. input signal iec 268 filtered pink noise; v p = 14.4 v; r l =2 w . (1) for a conventional btl amplifier. (2) for TDA1565TH. 430 w input output 330 w 3.3 k w 3.3 k w 10 k w 91 nf 68 nf 470 nf 2.2 m f 2.2 m f mgc428 fig.12 iec-60268 filter.
2004 jan 27 14 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH handbook, full pagewidth mhc604 19 cin 25 k w 60 k w 60 k w 60 k w 60 k w v ref out2 - out2 + 7 8 cse 16 18 in1 - 17 in1 + out1 + out1 - 4 3 v p2 11 v p1 20 TDA1565TH 10 m f 2200 m f 220 nf 220 nf iec-60268 filter pink noise + - + - v p 13 in2 - 14 in2 + 220 nf 100 nf 100 nf 3.9 w 2 w 3.9 w 100 nf 100 nf 3.9 w 2 w 3.9 w 220 nf + - + - 220 nf 2200 m f signal ground power ground interface 215 mode diag diag mode 5 gnd1 6 gnd2 v mode v logic r pu fig.13 test and application diagram for dissipation measurements with a simulated music signal (pink noise).
2004 jan 27 15 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH handbook, halfpage 0 150 100 50 0 824 16 mhc598 v p (v) i p (ma) fig.14 quiescent current as a function of v p . v mode = 5 v; r l = . handbook, halfpage 0 200 100 150 50 0 15 mhc599 23 (3) (2) (1) 4 v mode (v) i p (ma) fig.15 i p as a function of v mode . v in = 5 mv; v p = 14.4 v. (1) standby. (2) mute. (3) operating. handbook, halfpage 20 28 22 24 26 mhc597 10 10 2 10 3 10 4 10 5 10 6 g v (db) f (hz) fig.16 gain as a function of frequency. v in = 100 mv. handbook, halfpage - 80 - 60 - 40 - 20 0 mhc591 10 10 2 10 3 10 4 10 5 f (hz) svrr (db) fig.17 svrr as a function of frequency. (v ripple = 2 v (p-p).
2004 jan 27 16 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH handbook, halfpage - 90 - 70 - 50 - 30 - 10 mhc592 10 10 2 10 3 10 4 10 5 f (hz) a cs (db) (1) (2) fig.18 channel separation as a function of frequency. (1) p o =1w. (2) p o =10w. handbook, halfpage 08 24 0.8 0.6 0.2 0 0.4 16 mhc596 (2) (1) p o (w) v p (v) fig.19 ac operation as a function of v p . v in =50mv. (1) low supply mute. (2) load dump.
2004 jan 27 17 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH handbook, full pagewidth mhc594 10 2 10 1 10 - 1 0.1 1 10 5 2 0.5 0.2 50 20 10 - 2 (3) thd + noise (%) p o (w) (2) (1) fig.20 thd + noise as a function of p o . r l =2 w . (1) 10 khz. (2) 1 khz. (3) 100 hz.
2004 jan 27 18 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH handbook, full pagewidth mhc593 10 1 10 - 1 10 - 2 10 10 2 10 3 10 4 10 5 (1) (2) thd + noise (%) f (hz) fig.21 thd + noise as a function of frequency. r l =2 w . (1) p o =10w. (2) p o =1w.
2004 jan 27 19 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH handbook, full pagewidth mbh691 0 1 2 t (ms) 3 1/2 v p 1/2 v p 0 - v p v p v p 0 v p v load v master v slave 0 fig.22 output waveforms. also see fig.7. v load =(v out2+ ) - (v out2 - ) or (v out1+ ) - (v out1 - ). v master =v out2+ or v out1 - . v slave =v out2 - or v out1+ .
2004 jan 27 20 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH application notes a dvantages of high efficiency 1. power conversion improvement (power supply): the fact that the reduction of power dissipation is directly related to a reduction of supply current is often neglected. one advantage is voltage is dropped over the whole supply chain. another advantage is reduced stress for the coil in the supply line. even the adapter or supply circuit is cooler due to the reduced dissipation of heat in the whole chain because more supply current will be converted into output power. 2. power dissipation reduction: this is the best known advantage of high efficiency amplifiers. 3. heatsink size reduction. the size of heatsink for a conventional amplifier can be reduced by approximately 50 % at v p = 14.4 v when the TDA1565TH is used. in this case, the maximum heatsink temperature remains the same. 4. heatsink temperature reduction: the power dissipation and the thermal resistance of the heatsink determine the rise in heatsink temperature. if the same sized heatsink of a conventional amplifier is used, the maximum heatsink temperature and the maximum junction temperature both decrease, which extends the life of the semiconductor device; the maximum power dissipation for music, or similar input signals decreases by 40 %. it is clear that the use of the TDA1565TH saves a significant amount of energy. the maximum supply current decreases by approximately 32 %, which reduces the power dissipation in the amplifier as well as in the whole supply chain. the TDA1565TH allows the size of the heatsink to be reduced by approximately 50 %, or the temperature of the heatsink to be reduced by 40 % if the size of the heatsink is unchanged. a dvantage of the concept used by TDA1565TH because the TDA1565TH uses a single-ended capacitor to create a non-dissipating half supply voltage, it is highly efficient under all conditions. other design concepts rely on the fact that both input signals have the same amplitude and phase. using a se capacitor prevents any adverse affects on efficiency that could result from any form of processing that may have been applied to the input signals, such as amplitude difference, phase shift or delays between both input signals, or other dsp processing. handbook, halfpage mhc610 supply current reduction of 32% heatsink size reduction of 50% same heatsink size same junction temperature heatsink temperature reduction of 40% power dissipation reduction of 40% at p o = 3.2 w v p = 14.4 v choice fig.23 heatsink design.
2004 jan 27 21 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH internal pin configurations pin name equivalent circuit 2 mode 3, 8 out1+, out2 - 4, 7 out1+, out2 - 15 diag mhc607 2 mhc608 16 v p1, v p2 3, 8 mhc609 16 v p1, v p2 4, 7 mgw264 v p2 15
2004 jan 27 22 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH 16 cse 17, 18, 13, 14, 19 in1+, in1 - in2+, in2 - cin pin name equivalent circuit mhc606 16 v p2 mhc605 13, 14, 17, 18 19 v p1, v p2 v p1, v p2
2004 jan 27 23 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH package outline unit a 4 (1) references outline version european projection issue date iec jedec jeita mm + 0.08 - 0.04 3.5 0.35 dimensions (mm are the original dimensions) notes 1. limits per individual lead. 2. plastic or metal protrusions of 0.25 mm maximum per side are not included. sot418-3 0 5 10 mm scale hsop20: plastic, heatsink small outline package; 20 leads; low stand-off height sot418-3 a max. detail x a 2 3.5 3.2 d 2 1.1 0.9 h e 14.5 13.9 l p 1.1 0.8 q 1.7 1.5 2.5 2.0 v 0.25 w 0.25 yz 8 0 q 0.07 x 0.03 d 1 13.0 12.6 e 1 6.2 5.8 e 2 2.9 2.5 b p c 0.32 0.23 e 1.27 d (2) 16.0 15.8 e (2) 11.1 10.9 0.53 0.40 a 3 a 4 a 2 (a 3 ) l p q a q d y x h e e c v m a x a b p w m z d 1 d 2 e 2 e 1 e 20 11 1 10 pin 1 index 02-02-12 03-07-23
2004 jan 27 24 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH soldering introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering can still be used for certain surface mount ics, but it is not suitable for fine pitch smds. in these situations reflow soldering is recommended. re?ow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing. several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 to 270 c depending on solder paste material. the top-surface temperature of the packages should preferably be kept: below 225 c (snpb process) or below 245 c (pb-free process) C for all bga, htsson-t and ssop-t packages C for packages with a thickness 3 2.5 mm C for packages with a thickness < 2.5 mm and a volume 3 350 mm 3 so called thick/large packages. below 240 c (snpb process) or below 260 c (pb-free process) for packages with a thickness < 2.5 mm and a volume < 350 mm 3 so called small/thin packages. moisture sensitivity precautions, as indicated on packing, must be respected at all times. wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specifically developed. if wave soldering is used the following conditions must be observed for optimal results: use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time of the leads in the wave ranges from 3 to 4 seconds at 250 c or 265 c, depending on solder material applied, snpb or pb-free respectively. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. manual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
2004 jan 27 25 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH suitability of surface mount ic packages for wave and re?ow soldering methods notes 1. for more detailed information on the bga packages refer to the (lf)bga application note (an01026); order a copy from your philips semiconductors sales office. 2. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . 3. these transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature exceeding 217 c 10 c measured in the atmosphere of the reflow oven. the package body peak temperature must be kept as low as possible. 4. these packages are not suitable for wave soldering. on versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. on versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 5. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. 6. wave soldering is suitable for lqfp, tqfp and qfp packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 7. wave soldering is suitable for ssop, tssop, vso and vssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 8. image sensor packages in principle should not be soldered. they are mounted in sockets or delivered pre-mounted on flex foil. however, the image sensor package can be mounted by the client on a flex foil by using a hot bar soldering process. the appropriate soldering profile can be provided on request. 9. hot bar or manual soldering is suitable for pmfp packages. package (1) soldering method wave reflow (2) bga, htsson..t (3) , lbga, lfbga, sqfp, ssop..t (3) , tfbga, uson, vfbga not suitable suitable dhvqfn, hbcc, hbga, hlqfp, hso, hsop, hsqfp, hsson, htqfp, htssop, hvqfn, hvson, sms not suitable (4) suitable plcc (5) , so, soj suitable suitable lqfp, qfp, tqfp not recommended (5)(6) suitable ssop, tssop, vso, vssop not recommended (7) suitable cwqccn..l (8) , pmfp (9) , wqccn..l (8) not suitable not suitable
2004 jan 27 26 philips semiconductors product speci?cation high ef?ciency 2 40 w / 2 w stereo car radio power ampli?er TDA1565TH data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
? koninklijke philips electronics n.v. 2004 sca76 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands r32/02/pp 27 date of release: 2004 jan 27 document order number: 9397 750 12581


▲Up To Search▲   

 
Price & Availability of TDA1565TH

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X